真空 ›› 2023, Vol. 60 ›› Issue (3): 18-23.doi: 10.13385/j.cnki.vacuum.2023.03.04
朱建华, 潘婧, 岳建明, 郝丽萍, 支鹏伟, 贾哲
ZHU Jian-hua, PAN Jing, YUE Jian-ming, HAO Li-ping, ZHI Peng-wei, JIA Zhe
摘要: 采用固相反应法制备了不同比例的Sb掺杂ZnO靶材,并用脉冲激光沉积(PLD)法在Si(100)基底上制备了Zn1-xSbxO薄膜。通过XRD、光致发光(PL)谱对所制薄膜进行了结构表征和性能分析,探讨了不同Sb掺杂量和不同生长温度对薄膜结晶质量和发光性能的影响。结果表明:对比纯ZnO的PL谱发现ZnSbO薄膜出现了紫外峰,且随着Sb浓度的增加,所有发光峰的强度相对增大;针对Zn0.98Sb0.02O薄膜,不同的基底生长温度改变了薄膜的紫外和蓝光发射强度,500℃下薄膜具有最好的结晶质量和最强的发光峰;对于500℃下生长的Zn0.98Sb0.02O薄膜,当激发光源波长从325nm变化到300nm,峰位红移,而且紫外峰与蓝光锋强度比由1∶3变为12∶1。据此,可以通过改变Sb掺杂量、生长温度和激发光源波长,从而制备出不同波段、不同强度的发光器件。
中图分类号: TN304.2;O484.1;O484.4+1
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