浅谈EUV光刻机中的真空技术

doi:10.13385/j.cnki.vacuum.2026.02.09

摘要/Abstract

摘要： EUV光刻机也叫极紫外光刻机（Extreme Ultraviolet Lithography）,它是以13.5 nm波长的极紫外光作为光源。由于极紫外光易被包括空气在内的所有物质所吸收,因此EUV光刻机只能在真空环境下运行。与此同时,EUV光刻机对真空系统有着特殊的要求,与EUV光刻机有着良好兼容性的真空系统对提高EUV光刻机的寿命和良率有至关重要的影响。通过EUV光刻机中的关键架构和工艺所涉及的真空技术,介绍和探讨了EUV光刻机主要腔室特定真空环境的获得、兼容性设计、真空系统的材料对光刻质量的影响以及真空环境下的污染监测方法。

关键词: EUV光刻机, 真空技术, 兼容性设计, 污染监测

Abstract: EUV lithography is also called extreme ultraviolet lithography, which uses extreme ultraviolet light with a wavelength of 13.5 nm as the light source. Extreme ultraviolet light is easily absorbed by many materials, including air, so EUV lithography can only operate in vacuum environment. At the same time, EUV lithography has special requirements for vacuum system. In particular, vacuum system with good compatibility plays important impact on improving the life and yield of the EUV lithography. This paper reviews the acquisition of the specific vacuum environment in the main chambers, design of compatibility, influence of vacuum system materials on the quality of lithography, and the methods of contamination monitoring in the vacuum environment of the EUV lithography through the vacuum technology involved in the key architecture and process of the EUV lithography.

Key words: EUV lithography, vacuum technology, compatibility design, contamination monitoring

中图分类号: TN305.7

李小金, 孙雯君, 马奔, 董猛, 赵澜, 裴晓强, 李正清, 马凤英. 浅谈EUV光刻机中的真空技术[J]. 真空, 2026, 63(2): 61-67.

LI Xiaojin, SUN Wenjun, MA Ben, DONG Meng, ZHAO Lan, PEI Xiaoqiang, LI Zhengqing, MA Fengying. A Brief Review of Vacuum Technology in EUV Lithography[J]. VACUUM, 2026, 63(2): 61-67.

参考文献

[1] FANG Y X, HE Y F.Resolution technology of lithography machine[J]Journal of Physics: Conference Series., 2022, 2221(1): 012041.
[2] KAZAZIS D, SANTACLARA J G, VAN SCHOOT J, et al.Extreme ultraviolet lithography[J]. Nature Reviews Methods Primers, 2024, 4(1): 84.
[3] RASMUSSEN E G, WILTHAN B, SIMONDS B.Report from the extreme ultraviolet (EUV) lithography working group meeting: Current state, needs, and path forward[M]. US Department of Commerce, National Institute of Standards and Technology, 2023.
[4] FU N, LIU Y, MA X, et al.EUV lithography: State-of-the-art review[J]. Journal of Microelectronic Manufacturing, 2019, 2(2): 1-6.
[5] MIYAZAKI J, YEN A.EUV Lithography technology for high-volume production of semiconductor devices[J]. Journal of Photopolymer Science and Technology, 2019, 32(2): 195-201.
[6] 王魁波. 动态气体锁的测试装置及应用其测试的方法:中国专利,113281463[P].2021-08-20.
[7] HOON C S, SAN W C.Development of the vacuum spark as an EUV source for next generation lithography[C]//2006 IEEE International Conference on Semiconductor Electronics. IEEE, 2006.
[8] YANG G, WU L F, WANG T, et al.Vacuum cleaning of amorphous carbon using hydrogen plasma for EUV lithography[J]. Materials Science and Engineering: B, 2024, 307: 117545.
[9] BAKSHI V.EUV Lithography[M]. 2nd ed. Bellingham: SPIE Press, 2018.
[10] DENBEAUX G GARG R, WATERMAN J, et al. Quantitative measurement of EUV resist outgassing[C]//23rd European Mask and Lithography Conference (EMLC)Grenoble, France, 2007.
[11] MERTENS B M, VAN DER ZWAN B, DE JAGER P W H. Mitigation of surface contamination from resist outgassing in EUV lithography[J]. Microelectronic Engineering, 2000, 53(1-4): 659-662.
[12] 成荣. 用于光刻设备的真空释气装置:中国专利,112485978[P].2020-12-24.
[13] WANG K B, GAO Z X, LUO Y, et al.Experimental research on airflow efficiency of dynamic gas lock for extreme ultraviolet lithography[J]. Journal of Vacuum Science & Technology B, 2023, 41(4):042602.
[14] SUN J Z, WANG K B, WU X B, et al.Theoretical research on suppression ratio of dynamic gas lock for extreme ultraviolet lithography contamination control[J]. Journal of Vacuum Science & Technology B, 2022, 40(4): 042603.
[15] 郝明, 张雨豪, 滕帅, 等. 真空腔室气锁结构对碳传输与碳沉积抑制作用的实验研究[J]. 真空科学与技术学报, 2025, 45(4): 278-284.
[16] HAO M, TENG S, LIU J X, et al.Development of a dynamic gas lock inhibited model for EUV-induced carbon deposition[J]. The Journal of Chemical Physics, 2024, 160(4):044708.
[17] WOLSCHRIJN B, JANSEN R, STORM A, et al.Progress in optics lifetime program for ASML for EUV lithographic tools[C]//International Symposium on Extreme Ultraviolet Lithography. San Diego, USA, 2005.
[18] MA Z, SALLOUM R, KEEN A, et al.EUV lithography vacuum system energy and footprint reduction[C]//2022 International Workshop on Advanced Patterning Solutions (IWAPS). IEEE, Beijing, China, 2022: 1-4.
[19] BALLEY C, CONDON N, DONDERS J, et al.Opportunities for optimising vacuum and abatement systems for Extreme Ultra Violet Lithography[C]//International Symposium on Extreme Ultraviolet Lithography. 2010:17-20.
[20] MING H, CHEN S L, TENG S, et al.Implementation of a dynamic gas lock mechanism reducing contamination in extreme ultraviolet cleanrooms[J]. Journal of Industrial and Engineering Chemistry, 2025, 149(9):530-542 .
[21] MELING H, BENSCHOP J, HARTMAN R, et al.EXTATIC: ASML's α-tool development for EUVL[C]//Emerging Lithographic Technologies VI. International Society for Optics and Photonics, 2002, 4688: 10-19.
[22] KOBAYASHI S, TORIUMI M, SANTILLAN J J, et al.Analysis of outgassing from EUV resists[J]. Journal of Photopolymer Science and Technology, 2007, 20(3): 445-451.
[23] KHOPKAR Y, DENBEAUX G, JINDAL V, et al.Evaluating vacuum components for particle performance for EUV lithography[C]//SPIE Advanced Lithography San Jose, California, United States. 2014: 90483M.
[24] JOO J H.Vacuum Technology for EUV Lithography[J]. Vacuum Magazine, 2014, 1(3): 14-20.
[25] 王欲知, 陈旭. 真空技术[M]. 北京: 北京航空航天大学出版社, 2007.
[26] LÜTTGENAU B, IM H, ZHANG M, et al. Polypeptoids as promising EUV photoresists: a study of total electron yield and outgassing under EUV exposure[C]//Advances in Patterning Materials and Processes XLII. SPIE, San Jose, California, United States, 2025, 13428: 314-324.
[27] 罗艳, 王魁波, 吴晓斌. 极紫外光刻机真空材料放气分率的单质谱测试方法研究[J]. 质谱学报, 2018, 39(4): 392-398.
[28] TAKAHASHI S, MINAMI Y, KADOI M, et al.In-situ measurement of outgassing generated from EUV resist including metal oxide nanoparticles during electron irradiation[J]. Journal of Photopolymer Science and Technology, 2017, 30(1): 109-112.
[29] 陈金平,郝青山,王双青,等.极紫外光刻胶产气的定性和定量检测[J].分析化学,2020,48(12):1658-1665.
[30] 罗艳, 王魁波, 吴晓斌, 等. 高精度真空材料放气测试研究[J]. 真空科学与技术学报, 2016, 36(3):251-257.
[31] BAI G Y, HU X D, CHANG X L, et al.Optimization and testing of a mass spectrometer leak detection (MSLD) system[J]. Materials Evaluation, 2023, 81(12): 41-50.
[32] 胡晓月, 陈俊儒, 胡庆生, 等. 一种高真空零部件放气率测试装置的研制[J]. 真空科学与技术学报, 2024, 44(6): 477-487.

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