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VACUUM ›› 2021, Vol. 58 ›› Issue (2): 1-5.doi: 10.13385/j.cnki.vacuum.2021.02.01

• Thin Film •     Next Articles

Flow Field Analysis and Large-Scale Material Growth in a Vertical Graded Varying Velocity Hydride Vapor Phase Epitaxy（HVPE） Reactor

LI Cheng-ming1,2, SU Ning3, LI Lin4, YAO Wei-zhen1, YANG Shao-yan1,5   

  1. 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;
    2. Dongguan Institute of Opto-Electronics Peking University, Dongguan 523808, China;
    3. Shenyang Vacuum Technology Institute Co., Ltd., Shenyang 110042, China;
    4. Hunan Institue of Information Technology, Changsha 410151, China;
    5. Center of Materials Science and Optoelectronics Engineering, University of Chinese Acasdemy of Sciences, Beijing 100049, China
  • Received:2020-01-19 Online:2021-03-25 Published:2021-04-09

Abstract: Gallium nitride(GaN), as the representative of the wide gap semiconductor materials, is one of the important strategic development directions in our country. As an important material growth technology, hydride vapor phase epitax(HVPE) is an effective method for the fabrication of single crystal materials. In this paper, we propose a new flow field and temperature field of HVPE under the condition of stratified flow rate. The results indicate that the reaction precursors can be effectively distributed on the surface of the substrate susceptor when the flow velocity in the outer jet inlets region is three times that in the center region. Finally, HVPE material was grown on the surface of GaN seed crystal on sapphire substrate, and GaN single crystal with average thickness of 20.1 μm and uniformity fluctuation of 6.9% was obtained, which proved that good single crystal film material was grown under theoretical optimization design.

Key words: HVPE, reactor, gallium nitride(GaN), numerical simulation, nozzle

CLC Number: 

  • O484.1
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