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真空 ›› 2023, Vol. 60 ›› Issue (1): 30-35.doi: 10.13385/j.cnki.vacuum.2023.01.05

• 薄膜 • 上一篇    下一篇

Cu电极保护膜层氧化铝的原子层沉积工艺研究*

乌李瑛, 瞿敏妮, 付学成, 田苗, 马玲, 程秀兰   

  1. 上海交通大学电子信息与电气工程学院先进电子材料与器件平台,上海 200240
  • 收稿日期:2022-03-23 出版日期:2023-01-25 发布日期:2023-02-07
  • 通讯作者: 瞿敏妮,博士。
  • 作者简介:乌李瑛（1983-）,女,上海人,博士,助理研究员。
  • 基金资助:
    *2021年上海交通大学决策咨询重点课题（No.JCZXSJA-04）; 2020年上海交通大学决策咨询课题（No.JCZXSJB2020-010）

Study on Atomic Layer Deposition of Al2O3 Protective Film of Cu Electrode

WU Li-ying, QU Min-ni, FU Xue-cheng, TIAN Miao, MA Ling, CHENG Xiu-lan   

  1. Center for Advanced Electronic Materials and Devices, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
  • Received:2022-03-23 Online:2023-01-25 Published:2023-02-07

摘要： 介绍了硅功率器件Cu电极保护钝化膜层氧化铝的制备方法。采用热法ALD工艺和等离子增强ALD工艺在铜上沉积氧化铝薄膜,研究了不同ALD工艺、氧化剂种类、沉积温度和载气对氧化铝膜层质量及铜抗氧化保护效果的影响。结果表明：氧化剂对原子层沉积氧化铝薄膜的质量和铜电极的保护性能起着决定性作用;以臭氧（O3）作为氧化剂,氧化铝薄膜极易脱落,与铜表面的结合力很差;以氧等离子体（O-）作为氧化剂,铜表面被氧化形成了氧化铜（CuOx）层;而以水蒸气（H2O）作为氧化剂,在低温100℃下,得到的Al2O3薄膜致密,无明显缺陷,且与铜金属层的结合力较优,对铜抗氧化保护效果良好;当沉积温度高于200℃时,原子层沉积氧化铝薄膜的缺陷明显增多;等离子增强ALD工艺中,当载气为Ar时,所得氧化铝膜厚度不均匀,铜电极发生强烈氧化。

关键词: 原子层沉积, 铜电极, 氧化铝, 钝化保护, 氧化剂

Abstract: The preparation method of protective and passive film for Cu electrode of enhanced power device is introduced. Al2O3 films are deposited on copper by thermal ALD and plasma enhanced ALD techniques. The effects of different ALD techniques, oxidant type, deposition temperature and carrier gas on the quality of Al2O3 films and the protection performance for Cu oxidization are studied. The results show that oxidants play an important role in Al2O3 film quality and the protection performance for copper electrode. When ozone(O3) is used as oxidant, Al2O3 film deposited on copper layer is easy to fall off, and the adhesion to copper surface is very poor. Using oxygen plasma (O-) as oxidant, copper surface is oxidized to form CuOx layer. With H2O as oxidant, the Al2O3 film obtained at low temperature of 100℃ is dense without obvious defects, and has excellent bonding force with copper layer. When the deposition temperature is higher than 200℃, the defects of Al2O3 deposited by ALD increase obviously. In plasma enhanced atomic layer deposition, when the carrier gas is Ar, the thickness of Al2O3 film is not uniform, and the copper electrode is strongly oxidized.

Key words: ALD, copper electrode, Al2O3, passivation protection, oxidant

中图分类号: 

  • TB43
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