氮掺杂含量对氧化镓薄膜性质的影响*

doi:10.13385/j.cnki.vacuum.2026.04.03

摘要/Abstract

摘要： 为突破氧化镓p型掺杂困难的瓶颈,本文采用射频磁控溅射法在硅（Si）和石英衬底上制备了不同氮掺杂含量的β-Ga₂O₃薄膜,并系统研究了氮掺杂对其结构、光学与电学性质的影响。研究结果表明：氮掺杂并未改变β-Ga₂O₃的基本晶体结构,但对其光学带隙产生了显著的调制作用,随氮含量增加,光学带隙从4.56 eV减小至4.19 eV;霍尔效应测试表明,氮掺杂能够有效调控载流子的浓度与迁移率,并在特定掺杂浓度下实现导电类型从n型向p型的转变;光电性能测试显示,氮掺杂对β-Ga₂O₃ MSM器件的紫外光电性能呈现非单调影响,适量氮掺杂通过抑制暗电流与优化载流子行为,有效提升了器件的光暗电流比与探测性能。

关键词: 射频磁控溅射, 氮掺杂β-Ga₂O₃薄膜, 光学性质, 电学性质

Abstract: Addressing the challenge of p-type doping in gallium oxide, this study prepared β-Ga₂O₃ films with varying nitrogen concentrations on Si and quartz substrates via radio-frequency magnetron sputtering. The effects of nitrogen doping on the structure, optical, and electrical properties were systematically investigated. The results indicated that nitrogen doping did not alter the fundamental crystal structure of β-Ga₂O₃ but significantly modulated its optical bandgap, which decreased from 4.92 to 4.78 eV with increasing N content. Hall-effect measurements revealed that nitrogen doping effectively tuned the carrier concentration and mobility, achieving a conversion from n-type to p-type conductivity at a specific doping level. Furthermore, photoelectric characterizations demonstrated a non-monotonic influence of nitrogen doping on the UV photoresponse of β-Ga₂O₃ metal-semiconductor-metal devices. Optimal nitrogen doping effectively enhanced the photo-to-dark current ratio and detection performance by suppressing dark current and optimizing carrier behavior.

Key words: RF magnetron sputtering, N-doped β-Ga₂O₃ thin films, optical properties, electrical properties

中图分类号: O469

许佳伟, 邓金祥, 孔乐, 孟雪, 张庆, 吴瑞, 田坤, 刘伟曼, 翟伟健, 杨晓磊. 氮掺杂含量对氧化镓薄膜性质的影响^*[J]. 真空, 2026, 63(4): 14-21.

XU Jiawei, DENG Jinxiang, KONG Le, MENG Xue, ZHANG Qing, WU Rui, TIAN Kun, LIU Weiman, ZHAI Weijian, YANG Xiaolei. Evolution of Ga₂O₃ Thin Film Properties with Nitrogen Doping Levels[J]. VACUUM, 2026, 63(4): 14-21.

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