真空 ›› 2021, Vol. 58 ›› Issue (5): 57-61.doi: 10.13385/j.cnki.vacuum.2021.05.09
张晓霞, 邓金祥, 孔乐, 李瑞东, 杨子淑, 张杰
ZHANG Xiao-xia, DENG Jin-xiang, KONG Le, LI Rui-dong, YANG Zi-shu, ZHANG Jie
摘要: 本文采用射频磁控溅射法在Si(100)和石英衬底制备纯β-Ga2O3和不同浓度的Si掺杂β-Ga2O3薄膜,并且研究Si掺杂对β-Ga2O3薄膜结构、表面形貌和光学性质的影响。X射线衍射(XRD)测试结果表明,Si掺杂β-Ga2O3薄膜都未出现新的衍射峰,随着Si浓度的增加,β-Ga2O3的特征峰(111)逐渐向大角度方向移动。X射线光电子能谱(XPS)表明β-Ga2O3薄膜中成功掺入了Si元素。本文使用原子力显微镜(AFM)表征薄膜的表面形貌,结果表明薄膜表面的粗糙度随着Si浓度增加呈现单调递增的趋势。紫外-可见光(UV-visible)透射光谱表明薄膜均在可见光波段具有高透光率,薄膜的光学带隙随Si掺杂浓度的变大而变大。Si掺杂实现了β-Ga2O3的带隙可调,表明Si是一种有潜力的掺杂剂。
中图分类号:
[1] PEARTON S J, YANG J, CARY P H, et al.A review of Ga2O3 materials, processing, and devices[J]. Applied Physics Reviews, 2018, 5(1): 011301. [2] HIGASHIWAKI M, JESSEN G H. Guest editorial: The dawn of gallium oxide microelectronics[J]. Applied Physics Letters, 2018, 112(6): 060401.1-060401.4. [3] HE H Y, ORLANDO R, BLANCO M A, et al.First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases[J]. Physical Review B, 2006. 74, 195123. [4] HUANG H C, KIM M, ZHAN X, et al.High aspect ratio β-Ga2O3 fin arrays with low interface charge density by inverse metal-assisted chemical etching[J]. ACS Nano, 2019, 13(8): 8784-8792. [5] ZHANG H, DENG J, PAN Z, et al.Structural and optical properties of Nb-doped β-Ga2O3 thin films deposited by RF magnetron sputtering[J]. Vacuum, 2017, 146: 93-96. [6] GIRIJA K, THIRUMALAIRAJAN S, VALMOR R.Mastelaro, et al. Photocatalytic degradation of organic pollutants by shape selective synthesis of β-Ga2O3 microspheres constituted by nanospheres for environmental remediation[J]. Journal of Materials Chemistry A, 2015, 3(6): 2617-2627. [7] CHENG Y, YANG K, PENG Y, et al.Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation[J]. Journal of Materials Science, 2013, 24(12): 5122-5126. [8] LEE S A, HWANG J Y, KIM J P, et al. Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN/Al2O3 prepared by pulsed laser deposition[J]. Applied Physics Letters, 2006, 89(18): 182906-182906-3. [9] PASSLACK M, HUNT N E J, SCHUBERT E F, et al. Dielectric properties of electron-beam deposited Ga2O3 films[J]. Applied Physics Letters, 1994, 64(20): 2715. [10] 胡帆, 晁明举, 梁二军, 等. Mn掺杂Ga2O3薄膜的结构及光吸收性能研究[J]. 材料导报, 2009, 23(16):16-18, 21. [11] DU X, LI Z, LUAN C, et al.Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD[J]. Journal of Materials Science, 2015, 50(8):3252-3257. [12] VÍLLORA E G, SHIMAMURA K, YOSHIKAWA Y, et al. Electrical conductivity and carrier concentration control in beta-Ga2O3 by Si doping[J]. Applied Physics Letters, 2008, 92(20): A316. [13] HU D Q, WANG Y, ZHUANG S W, et al.Surface morphology evolution and optoelectronic properties of heteroepitaxial Si-doped β-Ga2O3 thin films grown by metal-organic chemical vapor deposition[J]. Ceramics International, 2017, 44(3): 3122-3127. [14] TAKAKURA K, KOGA D, OHYAMA H, et al.Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements[J]. Physica B Condensed Matter, 2009, 404(23-24): 4854-4857. [15] NIE Y, JIAO S, MENG F, et al.Growth and properties analysis of AlxGa2-xO3 thin film by radio frequency magnetron sputtering using Al/Ga2O3 target[J]. Journal of Alloys and Compounds, 2019, 798: 568-575. [16] LI W H, PENG Y K, WANG C, et al.Structural, optical and photoluminescence properties of Pr-doped β-Ga2O3 thin films[J]. Journal of Alloys & Compounds, 2017, 697: 388-391. [17] ZHANG H, DENG J X, HE Y F, et al.Effects of annealing and Nb doping on the electrical properties of p-Si/n-β-Ga2O3: Nb heterojunction[J]. Journal of Materials Science Materials in Electronics, 2018, 29: 19028-19033. [18] 张易军, 闫金良, 赵刚, 等. Si掺杂β-Ga2O3的第一性原理计算与实验研究[J]. 物理学报, 2011(3):560-566. [19] WEI M, JIN M, ZHAO L, et al.Characterization of Sn-Doped β-Ga2O3 films deposited on MgO(100) substrate by MOCVD[J]. Journal of Materials Science: Materials in Electronics, 2015, 26(10):7889-7894. [20] PASSLACK M, SCHUBERT E F, HOBSON W S, et al.Ga2O3 films for electronic and optoelectronic applications[J]. Journal of Applied Physics, 1995, 77(2): 686. [21] RAO R, RAO A M, XU B, et al. Blue shifted Raman scattering and its correlation with the[110] growth direction in gallium oxide nanowires[J]. Journal of Applied Physics, 2005, 98(9): 094312.1-094312.5. [22] GUO D, WU Z, LI P, et al.Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology[J]. Optical Materials Express, 2014, 4(5):1067. [23] AN Y H, CHU X L, HUANG Y Q, et al.Au plasmon enhanced high performance β-Ga2O3 solar-blind photo-detector[J]. Progress in Natural Science Materials International, 2016, 26(1): 65-68. [24] TAKAKURA K, FUNASAKI S, TSUNODA I, et al.Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si[J]. Physica B Physics of Condensed Matter, 2012, 407(15): 2900-2902. |
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