掺杂氧化铪基薄膜铁电性能的研究进展*

doi:10.13385/j.cnki.vacuum.2024.01.02

Abstract

Abstract: Most studies on ferroelectric thin films are focused on perovskite structural materials. However, these traditional ferroelectric materials have a variety of problems, such as poor compatibility with Si, environmental pollution caused by Pb, large physical thickness, low resistance, and small band gap. Different dopants such as Si, Zr, Al, Y, Gd, Sr and La can induce ferroelectric or antiferroelectric properties in HfO₂ films, resulting in residual polari stion up to 45 µC·cm^-2 and coercivity (1~2 MV·cm^-1) approximately one order of magnitude greater than that of conventional ferroelectric films. At the same time, the thickness of HfO₂ films can be very thin (below 10 nm) and the band gap is large (~ 5 eV). These advantages over traditional ferroelectric materials can overcome the obstacles of traditional ferroelectric materials including ferroelectric field effect transistors and 3D capacitors in thin film memory applications. In addition, the electrical and thermal coupling of antiferroelectric films holds promise for a variety of applications, such as energy harvesting/storage, solid state cooling, and infrared sensors. HfO₂ doped thin films can be deposited by different deposition techniques, such as ALD, sputtering and CSD, and ALD has more obvious advantages in film deposition. In this paper, the recent progress of ferroelectric and antiferroelectric properties in HfO₂ doped thin films is reviewed. The effects of different doping elements, film thickness, grain size, electrode, annealing, and stress on the ferroelectric properties of HfO₂ thin films are described in detail.

Key words: ALD, HfO₂ thin film, doping, ferroelectric, polarization

CLC Number: TB34

WU Li-ying, LIU Dan, FU Xue-cheng, CHENG Xiu-lan. Research Progress on Ferroelectric Properties of Hafnium Oxide Doped Thin Films[J].VACUUM, 2024, 61(1): 10-20.

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Research Progress on Ferroelectric Properties of Hafnium Oxide Doped Thin Films

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