中频磁控反应溅射氧化硅（SiOx）薄膜绝缘性的研究*

doi:10.13385/j.cnki.vacuum.2023.02.06

真空 ›› 2023, Vol. 60 ›› Issue (2): 34-38.doi: 10.13385/j.cnki.vacuum.2023.02.06

中频磁控反应溅射氧化硅（SiOx）薄膜绝缘性的研究^*

张汉焱, 郑丹旭, 沈奕, 陈玉云

汕头超声显示器技术有限公司,广东汕头 515041

收稿日期:2022-06-07 出版日期:2023-03-25 发布日期:2023-03-27
通讯作者: 沈奕,教授级高工。
作者简介:张汉焱（1981-）,男,广东汕头人,硕士,高级工程师。
基金资助:
*广东省企业科技特派员项目（GDKTP2021033800）

Research of Insulation of Silicon Oxide Film Produced by Medium Frequency Magnetron Sputtering

ZHANG Han-yan, ZHENG Dan-xu, SHEN Yi, CHEN Yu-yun

Shantou Goworld Display Technology Co., Ltd., Shantou 515041, China

Received:2022-06-07 Online:2023-03-25 Published:2023-03-27

摘要/Abstract

摘要： 本文采用兆欧表测量电阻的方法,研究了中频磁控溅射氧化硅（SiO_x）薄膜的绝缘性。利用XRD和FTIR对薄膜进行了表征。结果表明：溅射产物为无定型SiO_x;兆欧表探针接触薄膜瞬间的电阻R_i与FTIR图谱位于900cm^-1波数附近的吸收峰a和760cm^-1附近的吸收峰b相关;随着R_i增加,吸收峰b红移,a与b的峰高比上升,SiO_x薄膜含氧量增大;R_i偏低的异常品经过250℃热处理,可达到正常产品的阻值范围,镀膜腔室内氧浓度的异常变化是生产过程中SiO_x薄膜绝缘性下降的原因。

关键词: 中频磁控溅射, 氧化硅薄膜, 绝缘性, 电阻, 傅里叶变换红外光谱, 含氧量

Abstract: The insulation of medium frequency magnetron sputtered silicon oxide films were surveyed by resistance measurement with megohm meter. The films were characterized by XRD and FTIR. The results show that the film is amorphous SiO_x. Instantaneous resistance(R_i) when the probe on the megohm meter attaches the SiO_x film is related to the absorbing peaks near wavenumber 900cm^-1(peak a) and 760cm^-1(peak b) on FTIR spectrum. As R_i rises, peak b shows red shift and the peak height ratio of peaks a and b rises. It can be concluded that R_i rises with content of oxygen in SiO_x film. The abnormal products with lower R_i can be recovered to normal range by 250℃ heating treatment. The insulation decrease of SiO_x films in production process may be caused by abnormal change of oxygen concentration in the chamber.

Key words: medium frequency magnetron sputtering, silicon oxide coating, insulation, resistance, FTIR, oxygen content

中图分类号:

O484.1

张汉焱, 郑丹旭, 沈奕, 陈玉云. 中频磁控反应溅射氧化硅（SiOx）薄膜绝缘性的研究^*[J]. 真空, 2023, 60(2): 34-38.

ZHANG Han-yan, ZHENG Dan-xu, SHEN Yi, CHEN Yu-yun. Research of Insulation of Silicon Oxide Film Produced by Medium Frequency Magnetron Sputtering[J]. VACUUM, 2023, 60(2): 34-38.

参考文献

[1] TABATA A, MATSUNO N, SUZUOKI Y, et al. Optical properties and structure of SiO₂ films prepared byion-beam sputtering[J]. Thin Solid Films, 1996(1/2), 289: 84-89.
[2] OHSAKI H, TACHIBANA Y, SHIMIZU J, et al. High-rate deposition of SiO₂ by modulated DC reactive sputtering in thetransition mode without a feedback system[J]. Thin Solid Films, 1996, 281/282: 213-217.
[3] CARNEIRO J O, MACHADO F, REBOUTA L, et al.Compositional, optical and electrical characteristics of SiO_x thin films deposited by reactive pulsed DC magnetron sputtering[J]. Coatings, 2019, 9: 468.
[4] 张天栋, 戚振飞, 张昌海, 等. 基于氧化硅绝缘层改性的PMMA复合薄膜储能性能研究[J]. 中国电机工程学报, 2022, 42(7): 2797-2804.
[5] 黄翀, 李成, 杨玮枫, 等. 电容触摸屏ITO消影膜的设计与制备[J]. 光电子技术, 2014, 34(4): 269-272.
[6] 孟政, 刘静, 汪洪. 消影透明导电薄膜的光学设计与制备[C]//2015年全国玻璃科学技术年会论文专集. 宿迁: 中国硅酸盐学会, 2015.
[7] HONG J K, KIM H R, PARK H H.The effect of sol viscosity on the sol-gel derived low density SiO₂ xerogel film for intermetal dielectric application[J]. Thin Solid Films, 1998, 332(1/2): 449-454.
[8] 张劲松, 任兆杏, 梁荣庆, 等. ECR-PECVD 制备SiO₂薄膜中衬底射频偏压的作用[J]. 核聚变与等离子体物理, 2001, 21(1): 59-64.
[9] AZIZI A, GADINSKI M R, LI Q, et al.High performance polymers sandwiched with chemical vapor deposited hexagonal boron nitrides as scalable high-temperature dielectric materials[J]. Advanced Materials, 2017, 29(35): 1701864.
[10] 俞立宸, 季鑫, 高磊, 等. SiO₂薄膜制备方法、性能及其应用的研究进展[J]. 上海工程技术大学学报, 2019, 33(3): 215-218.
[11] 许生, 侯晓波, 范垂祯, 等. 硅靶中频反应磁控溅射二氧化硅薄膜的特性研究[J]. 真空, 2001(5): 1-6.
[12] HE L N, WANG D M, HASEGAWA S.A study of plasma-deposited amorphous SiO_x: H(0<x≤2.0) films using infrared spectroscopy[J]. Journal of Non-Crystalline Solids, 2000, 261(1): 67-71.
[13] PAI P G, CHAO S S, TAKAGI Y, et al.Infrared spectroscopic study of SiO_x films produced by plasma enhanced chemical vapor deposition[J]. Journal of Vacuum Science & Technology A, 1986, 4(3): 689-694.
[14] GOLE J L, DUDEL F P, GRANTIER D, et al.Origin of porous silicon photoluminescence: evidence for a surface bound oxyhydride-like emitter[J]. Physics Review B, 1997, 56: 2137-2153.
[15] 何乐年. 等离子体化学气相沉积非晶SiO_x: H(0<x≤2.0)薄膜的红外光谱[J]. 半导体学报, 2001, 22(5): 587-593.
[16] 张剑. 直流磁控溅射制备二氧化硅薄膜及其性能[J]. 中国表面工程, 2013, 26(1): 34-39.
[17] HOFMAN R, WESTHEIM J G F, POUWEL J, et al. FTIR and XPS studies on corrosion resistant SiO₂ coatings as a function of the humidity during deposition[J]. Surface & Interface Analysis, 2017, 24(1): 1-6.
[18] 何乐年, 徐进, 王德苗. 反应RF磁控溅射法制备非晶氧化硅薄膜及其特性研究[J]. 真空, 2001(3): 16-19.
[19] 王慧, 刘静. 溅射SiO_x薄膜氧含量与红外特性关系研究[J]. 陶瓷, 2007(9): 27-29.
[20] 黄香平. 硅薄膜微结构及悬挂键缺陷研究[D]. 长沙: 中南大学, 2010.
[21] 袁军平, 陈绍兴, 金莉莉, 等. 首饰基材表面反应磁控溅射SiO₂薄膜工艺[J]. 电镀与涂饰, 2022, 40(16): 1244-1249.

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中频磁控反应溅射氧化硅（SiOx）薄膜绝缘性的研究^*

Research of Insulation of Silicon Oxide Film Produced by Medium Frequency Magnetron Sputtering

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