真空 ›› 2022, Vol. 59 ›› Issue (1): 24-28.doi: 10.13385/j.cnki.vacuum.2022.01.05
廖国进, 闫绍峰, 仪登利, 戴晓春
LIAO Guo-jin, YAN Shao-feng, YI Deng-li, DAI Xiao-chun
摘要: 为了得到最优发光的薄膜材料成分参数,采用均匀设计和二次通用旋转组合设计相结合的方法建立发光强度与薄膜中氧含量和Ce3+离子掺杂浓度的回归方程,并用遗传算法求其取最大值时的解。用中频反应磁控溅射技术制备了相应成分的Al2O3:Ce非晶薄膜。在320nm光激发下,获得了较理想的发射光谱,对薄膜发光机理分析表明:薄膜的光致发光来自于Ce3+离子的5d1激发态向基态4f1的两个劈裂能级的跃迁。发光强度强烈的依赖于薄膜的掺杂浓度和氧元素含量。XPS检测表明,Al2O3:Ce薄膜中存在Ce3+。Ce3+含量和薄膜的化学成分是通过X射线散射能谱(EDS)测量的。薄膜试样的晶体结构应用X射线衍射分析。
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