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VACUUM ›› 2021, Vol. 58 ›› Issue (5): 57-61.doi: 10.13385/j.cnki.vacuum.2021.05.09

• Thin Film • Previous Articles     Next Articles

Preparation and Study of Si-doped β-Ga2O3 Thin Films with Different Content

ZHANG Xiao-xia, DENG Jin-xiang, KONG Le, LI Rui-dong, YANG Zi-shu, ZHANG Jie   

  1. Faculty of Science, Beijing University of Technology, Beijing 100124, China
  • Received:2020-06-03 Online:2021-09-25 Published:2021-09-23

Abstract: In this work, pure β-Ga2O3 and Si-doped β-Ga2O3 thin films with different content were grown on Si(100)substrate and quartz substrate by radio frequency magnetron sputtering to study the influence of Si doping on the structure, surface morphology and optical properties of β-Ga2O3. The X-ray diffraction results showed that no new diffraction peaks were observed in all Si-doped β-Ga2O3 films,and the(111)diffraction peak gradually moved towards a larger angle with the increase of Si concentration. The X-ray photoelectron spectroscopy results indicated that Si was successfully doped in β-Ga2O3 films. The atomic force microscopy was used to study the surface morphology of films,and the results suggestedthat the roughness of films increased monotonously with the increase of Si content. The UV-visible light transmission spectrum tests showed that all films had the advantage of high transparency in visible region,while the optical band gap got larger with Si content increased. The band gap of β-Ga2O3 film can be adjusted after Si doping,which indicates Si is a potential dopant.

Key words: radio frequency magnetron sputtering, Si-doped β-Ga2O3 thin film, band gap, structure

CLC Number: 

  • O469
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