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VACUUM ›› 2023, Vol. 60 ›› Issue (2): 34-38.doi: 10.13385/j.cnki.vacuum.2023.02.06

• Thin Film • Previous Articles     Next Articles

Research of Insulation of Silicon Oxide Film Produced by Medium Frequency Magnetron Sputtering

ZHANG Han-yan, ZHENG Dan-xu, SHEN Yi, CHEN Yu-yun   

  1. Shantou Goworld Display Technology Co., Ltd., Shantou 515041, China
  • Received:2022-06-07 Online:2023-03-25 Published:2023-03-27

Abstract: The insulation of medium frequency magnetron sputtered silicon oxide films were surveyed by resistance measurement with megohm meter. The films were characterized by XRD and FTIR. The results show that the film is amorphous SiOx. Instantaneous resistance(Ri) when the probe on the megohm meter attaches the SiOx film is related to the absorbing peaks near wavenumber 900cm-1(peak a) and 760cm-1(peak b) on FTIR spectrum. As Ri rises, peak b shows red shift and the peak height ratio of peaks a and b rises. It can be concluded that Ri rises with content of oxygen in SiOx film. The abnormal products with lower Ri can be recovered to normal range by 250℃ heating treatment. The insulation decrease of SiOx films in production process may be caused by abnormal change of oxygen concentration in the chamber.

Key words: medium frequency magnetron sputtering, silicon oxide coating, insulation, resistance, FTIR, oxygen content

CLC Number: 

  • O484.1
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