VACUUM ›› 2026, Vol. 63 ›› Issue (3): 16-22.doi: 10.13385/j.cnki.vacuum.2026.03.02
• Thin Film • Previous Articles Next Articles
ZHU Yunhe1, ZANG Haotian1, ZHENG Mengxin2, WANG Xiaodong1
CLC Number: TB79
| [1] 王晓冬,巴德纯,张世伟,等.真空技术[M].北京:冶金工业出版社,2006. [2] 宁久鑫,黄海龙,王晓冬,等.溅射离子泵抽气单元放电及离子输运仿真[J].东北大学学报(自然科学版),2020,41(7):962-967. [3] 王晓冬,黄海龙,宁久鑫,等.溅射离子泵阳极筒-阴极板间距对抽气特性影响的数值研究[J].真空与低温,2020,26(4):265-269. [4] 沈宝华,陈丽萍,姜晓丽,等.非蒸发型吸气剂泵与离子泵组成的复合泵[C]//中国真空学会真空获得与测量学术交流会.北京:中国真空学会,2001. [5] 陈建中,朱国新.复合式溅射离子泵[J].真空,1978,15(1):11-18. [6] 李城钰,齐京,陈旭.非蒸散型吸气剂在微型离子泵中的应用[J].真空,2009,46(4):49-52. [7] 蒋迪奎,陈丽萍,殷立新.10-10 Pa溅射离子泵和非蒸散型吸气剂的复合泵[J].真空科学与技术学报,2004,24(3):65-67. [8] KIRCHGEORG N, BUCHMANN J, GAIFFI N, et al.A-new NEG coating setup with travelling thin solenoids for the SLS 2.0 complex vacuum chambers[C]//Journal of Physics: Conference Series. IOP Publishing, 2024, 2687(8): 082028. [9] 赵壮,马文静,葛晓琴,等.HALF银铜管道的多腔TiZrV镀膜初步研究[J].真空科学与技术学报,2023,43(1):21-28. [10] STUTZMAN M L, ADDERLEY P A, MAMUN M A A, et al. Nonevaporable getter coating chambers for extreme high vacuum[J]. Journal of Vacuum Science & Technology A, 2018, 36(3): 031602. [11] 张波. 真空室内壁镀TiZrV吸气剂薄膜的工艺及薄膜相关性能的研究[D].合肥:中国科学技术大学,2011. [12] CHIGGIATO P, PINTO P C.Ti-Zr-V non-evaporable getter films: from development to large scale production for the large hadron collider[J]. Thin Solid Films, 2006, 515(2): 382-388. [13] 单睿,齐通通,黎秉哲,等.非蒸散型薄膜吸气剂的研究现状及应用进展[J].功能材料,2018,49(5):5049-5055. [14] 颜攀,韩兴博,冷海燕,等.非蒸散型吸气剂的研究进展[J].真空科学与技术学报,2018,38(8):650-656. [15] 汪志伟,王旭迪,尉伟,等.可低温激活的钛锆钒非蒸散型吸气剂薄膜的制备及其性能研究[J].真空科学与技术学报,2021,41(8):739-744. [16] 葛晓琴. 低激活温度的非蒸散型吸气剂薄膜在大型粒子加速器中的应用研究[D].合肥:中国科学技术大学,2021. [17] CAO Q, WANG X, WANG S, et al.Development and characterization of an improved Ti-Zr-V thin-film getter with 3D porous nano-scaffolds[J]. Vacuum, 2023, 209: 111747. [18] 张以忱,蔺增,岳向吉,等.真空镀膜技术与设备[M].北京:冶金工业出版社,2021. [19] 胡作启,李佐宜,缪向水,等.磁控溅射薄膜的厚度均匀性理论研究[J].华中理工大学学报,1996,24(1):89-92. [20] 温培刚,颜悦,张官理,等.磁控溅射沉积工艺条件对薄膜厚度均匀性的影响[J].航空材料学报,2007,27(3):66-68. [21] 于贺,吴志明,王涛,等.平面磁控溅射薄膜厚度均匀性的研究概述[J].真空,2010,47(3):9-15. [22] MENG X Q, FAN X J, GUO H X.A new formula on the thickness of films deposited by planar and cylindrical magnetron sputtering[J]. Thin Solid Films, 1998, 335(1-2): 279-283. [23] MAHIEU S, BUYLE G, DEPLA D, et al.Monte Carlo simulation of the transport of atoms in DC magnetron sputtering[J]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 243(2): 313-319. [24] NGUYEN C, WEIMER J J.Toward improving the overall uniformity in Langmuir films of nanoparticles by controlling the initial deposition parameters[J]. Langmuir, 2025, 41(8): 5288-5301. [25] BADORRECK H, KELLERMANN T, BARTON D, et al.Optimizing large area homogeneity for ion beam sputtering thin film deposition:A multifaceted approach[J]. Surfaces and Interfaces, 2025: 107669. [26] WU Y, LIU K, SHE P, et al.Simulation and optimization of reactor airflow and magnetic field for enhanced thin film uniformityin physical vapor deposition[J]. Microelectronic Engineering, 2025, 296: 112294. [27] CHENG Z, FAN R, WANG A, et al.Realizing ultrauniform films at wafer scale through the magnetron sputtering method[J]. CrystalGrowth & Design, 2023, 24(1): 339-346. [28] HELMER J C, WICKERSHAM C E.Pressure effects in planar magnetron sputter deposition[J]. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1986, 4(3): 408-412. [29] CHENG Z, WANG A, BO H, et al.Preparation and structural investigation of ultra-uniform Mo films on a Si/SiO2 wafer by the direct-current magnetron sputtering method[J].Crystal Growth & Design, 2023, 23(2): 1014-1022. [30] QU P, JIN P, ZHOU G, et al.Epitaxial growth of high-quality yttria-stabilized zirconia films with uniform thickness on silicon by the combination of PLD and RF sputtering[J]. Surface and Coatings Technology, 2023,456: 129267. [31] LI J, AN Q, FANG H.Monte Carlo simulation of deposition uniformity in the triple-target magnetron co-sputtering system[J]. Applied Surface Science, 2024, 646: 158914. [32] ZHOU J, LV B, LIANG H, et al.Simulation and optimization of polysilicon thin film deposition in a 3000 mm tubular LPCVD reactor[J]. Solar Energy, 2023, 253: 462-471. |
|