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VACUUM ›› 2024, Vol. 61 ›› Issue (6): 15-20.doi: 10.13385/j.cnki.vacuum.2024.06.03

• Thin Film • Previous Articles     Next Articles

Study of Electrical Insulation Property of Magnetron Sputtered Silicon Oxide and Silicon Oxide/Silicon Nitride/Silicon Oxide Films

CHEN Yu-yun1, WANG Xiao-xu2, CHEN Yuan-ming1, SHEN Yi1, HUANG Rui3   

  1. 1. Guangdong Provincial Key Laboratory of Automotive Display and Touch Technologies, Shantou Goworld Display Technology Co., Ltd., Shantou 515041, China;
    2. Shantou Goworld Display (Plant II) Co., Ltd., Shantou 515041,China;
    3. Hanshan Normal University, Chaozhou 521000, China
  • Received:2024-01-23 Online:2024-11-25 Published:2024-11-29

Abstract: Electrical insulation property of magnetron sputtered silicon oxide (SiO2) and silicon oxide/silicon nitride (Si3N4)/silicon oxide (ONO) films were investigated. The insulation resistance of three batches of SiO2 and ONO films of 4.5 cm × 3.5 cm were tested. The results show that the ratio of fully-insulative ONO films is relatively higher and more stable. Compared with SiO2 single layer, the signal related to stretch motions of bridge oxygen (peak A) of ONO film is blue shifted, and the signal related to oxygen vacancies (peak B) or bending motions of non-bridge oxygen (peak C) is weaker than the signal related to bending motion of bridge oxygen (peak D). These structural features indicate that the atomic defects (such as oxygen vacancies and non-bridge oxygen) within ONO films are less than those within SiO2 films. Such differences are understood in terms that the addition of Si3N4 interlayer chemically interrupts the continuous growth of defects in SiO2 films. By quantifying the three parameters including position of peak A, the ratio of intensity of peak D to that of peak B, the ratio of intensity of peak D to that of peak C, the electrical insulation properties of SiO2 and ONO films can be evaluated non-destructively.

Key words: magnetron sputtering, silicon oxide, ONO stack, electrical insulation property, FTIR spectroscopy, non-destructive testing

CLC Number:  O484.1

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