PECVD法制备石墨烯过程中不同生长阶段H2的作用分析*

doi:10.13385/j.cnki.vacuum.2024.01.05

真空 ›› 2024, Vol. 61 ›› Issue (1): 34-40.doi: 10.13385/j.cnki.vacuum.2024.01.05

PECVD法制备石墨烯过程中不同生长阶段H₂的作用分析^*

黄光宏¹, 李迪², 李娜¹, 甄真¹, 王鑫¹, 许振华¹

1.中国航发北京航空材料研究院,航空材料先进腐蚀与防护航空科技重点实验室,北京 100095;
2.新疆中油建筑安装工程有限责任公司,新疆维吾尔自治区乌鲁木齐 830092

收稿日期:2023-07-06 出版日期:2024-01-25 发布日期:2024-01-24
通讯作者: 许振华,研究员。
作者简介:黄光宏（1978-）,男,云南省丽江市人,硕士,高级工程师。
基金资助:
* 中国科协青年人才托举工程（NO.YESS20200306）

Effect of H₂ on the Graphene Growth at Different Stages in the Plasma Enhanced Chemical Vapor Deposition Process

HUANG Guang-hong¹, LI Di², LI Na¹, ZHEN Zhen¹, WANG Xin¹, XU Zhen-hua¹

1. AECC Beijing Institute of Aeronautical Materials, Aviation Key Laboratory of Science and Technology on Advanced Corrosion and Protection for Aviation Material, Beijing 100095, China;
2. XINJIANG Petrochina Construction and Installation Engineering Co., Ltd., Wulumuqi 830092, China

Received:2023-07-06 Online:2024-01-25 Published:2024-01-24

摘要/Abstract

摘要： 石墨烯作为一种性能独特的新型二维材料,在航空航天、电子器件、医学生物等领域具有巨大的发展潜力。采用等离子体增强化学气相沉积（PECVD）法,以铜箔为基底,利用氢气和甲烷混合气体制备了石墨烯,研究了生长及冷却阶段H₂对石墨烯形核及生长的作用机理。结果表明：在PECVD过程中,石墨烯生长前采用H₂等离子体对铜基底预刻蚀会导致基底粗糙度增加,从而产生较多的形核位点,不利于低密度大尺寸石墨烯晶粒的生长;生长过程中H₂会对多层石墨烯刻蚀,较高的H₂流量下可以形成单层石墨烯;生长结束后通入H₂保温一定时间,石墨烯会被刻蚀成条带状,这种刻蚀随着保温时间的延长而加剧。

关键词: 石墨烯, 等离子体辅助化学气相沉积, H₂等离子体

Abstract: Graphene, a new two-dimensional material with excellent performance, has great potential for applications in the fields of aerospace, electronic devices, and bio-medical. Plasma enhanced chemical vapor deposition (PECVD) was used to prepare grapheneon copper foil using a mixture of hydrogen and methane gas. The mechanism of H₂on the nucleation and growth of graphenein growth and cooling stage of PECVD was studied. The results show that in the PECVD process, the pre-etching of copper substrate by H₂ plasma before graphene growth would increase the roughness of the substrate, which is not conducive to the growth of low-density and large-size graphene grains. During the growth process, H₂ could etch multiple layers of graphene, and a single layer of graphene could be formed at higher H₂ flow rate. After the end of growth, holdingthe graphene in H₂ for a certain period of time, it would be etched into ribbons, and the etching would be intensified with the extension of holding time.

Key words: graphene, PECVD, H₂ plasma

中图分类号: TB322

黄光宏, 李迪, 李娜, 甄真, 王鑫, 许振华. PECVD法制备石墨烯过程中不同生长阶段H₂的作用分析^*[J]. 真空, 2024, 61(1): 34-40.

HUANG Guang-hong, LI Di, LI Na, ZHEN Zhen, WANG Xin, XU Zhen-hua. Effect of H₂ on the Graphene Growth at Different Stages in the Plasma Enhanced Chemical Vapor Deposition Process[J]. VACUUM, 2024, 61(1): 34-40.

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PECVD法制备石墨烯过程中不同生长阶段H₂的作用分析^*

Effect of H₂ on the Graphene Growth at Different Stages in the Plasma Enhanced Chemical Vapor Deposition Process

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