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真空 ›› 2025, Vol. 62 ›› Issue (5): 11-16.doi: 10.13385/j.cnki.vacuum.2025.05.02

• 真空应用 • 上一篇    下一篇

面向高精度半导体制程真空环境的热管理研究

李翔, 姜小蛟, 刘昂, 曾鸣   

  1. 沈阳富创精密设备股份有限公司,辽宁 沈阳 110015
  • 收稿日期:2025-03-13 发布日期:2025-09-29
  • 作者简介:李翔(1991-),男,辽宁省沈阳市人,硕士,工程师。

Research on Optimization of Temperature Field Design for Heating Plate of Integrated Circuit Equipment

LI Xiang, JIANG Xiaojiao, LIU Ang, ZENG Ming   

  1. Shenyang Fortune Precision Equipment Co., Ltd., Shenyang 110015, China
  • Received:2025-03-13 Published:2025-09-29

摘要: 随着集成电路制程向7 nm及以下节点演进,晶圆加热盘需在真空环境中实现高均匀热场。本文针对真空设备中不锈钢加热盘低热导率导致的均温性难题,提出一种基于径厚比(K=D/δ)的发热元件优化排布方法。通过建立热传导-辐射耦合模型,结合有限元模拟获取4种典型直径(6,8,10,12英寸)加热盘在10~30 mm厚度区间的120组热场数据,建立径厚比与最优排布圈数的模型并拟合出关系式,计算结果显示模型拟合关系式的残差R²=0.969 1。研究表明:加热盘均温性随径厚比增大呈先改善后劣化趋势,最佳径厚比为7~12,对应的最佳加热丝排布圈数为4~6。该模型可为直径≤350 mm的不锈钢加热盘设计提供量化参考,较传统迭代试错法大幅缩短研发周期。

关键词: 半导体, 不锈钢, 加热盘, 温度场, 径厚比

Abstract: As the integrated circuit process evolves towards 7 nm and below nodes, the wafer heating plate needs to achieve a highly uniform thermal field in vacuum environment. This article proposes an optimized arrangement method for heating elements based on the diameter/thickness ratio (K=D/δ) to address the problem of temperature uniformity caused by low thermal conductivity of stainless steel heating plates in vacuum equipment. By establishing a heat conduction radiation coupling model and combining it with finite element simulation, 120 sets of thermal field data were obtained for four typical diameters (6,8,10,12 inches) of heating plates in the thickness range of 10-30 mm. A model was established for the ratio of diameter/thickness and the optimal number of coil arrangements, and a relationship formula was fitted. The calculation results show that the residual R² of the model fitting relationship is 0.969 1. The results show that the temperature uniformity of the heating plate improves first and then deteriorates with the increase of the diameter to thickness ratio. The optimal diameter/thickness ratio is 8-12, corresponding to the optimal number of heating wire arrangement turns of 4-6. This model can provide quantitative reference for the design of stainless steel heating plates with a diameter ≤350 mm, significantly shortening the development cycle compared to traditional iterative trial and error methods.

Key words: semiconductor, stainless steel, heating plate, temperature field, diameter to thickness ratio

中图分类号:  TB79

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