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VACUUM ›› 2023, Vol. 60 ›› Issue (5): 75-80.doi: 10.13385/j.cnki.vacuum.2023.05.12

• Vacuum Acquisition System • Previous Articles     Next Articles

Performance Test of 200mm Diameter Cryopump for Semiconductor PVD Usage

DENG Jia-liang1,2, ZENG Huan1,2, YANG Yang2, FENG Xin-yu1,2, WU Yi-feng1,2   

  1. 1. The 16th Research Institute of China Electronics Technology Group Corporation, Hefei 230088, China;
    2. Vacree Technologies Co., Ltd., Hefei 230088, China
  • Received:2023-06-21 Online:2023-09-25 Published:2023-09-26

Abstract: Cool-down time, base pressure, pumping speed and gas capacity are key parameters of cryopump. In this paper systematic measurements and analysis of 200mm diameter ICP200N cryopump with the designed comprehensive performance test platform were carried out. The results show that the cool-down time of ICP200N cryopump is less than 90 minutes. The base pressure can reach the level of 10-7Pa without baking, and the main residual gas ingredients are water and hydrogen. The testing method of 30s recovery capacity was given, which is very important in the realistic PVD applications. The corresponding capacity for argon and nitrogen is 820L and 590L, respectively. A simple flow calibration device to improve the pumping speed measurement accuracy was also designed, and the test results show that the nitrogen and argon pumping speed of ICP200N cryopump is comparable with that of international mainstream competitor. So far the ICP200N cryopump has been widely used in the PVD equipment of domestic semiconductor production line.

Key words: cryopump, cool-down time, base pressure, pumping speed, gas capacity

CLC Number:  TB752+.53

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