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VACUUM ›› 2021, Vol. 58 ›› Issue (4): 93-97.doi: 10.13385/j.cnki.vacuum.2021.04.17

• Vacuum Technology Application • Previous Articles     Next Articles

Effect of CF4 Flow Rate and RF Power on Reactive Ion Etched Silicon Based Materials

LIAO Rong, CUI Ji-yao, DONG Jing-shang, CHEN Dong, HE Wei-jun   

  1. School of Microelectronic, South China University of Technology, Guangzhou 510640, China
  • Received:2020-06-17 Online:2021-07-25 Published:2021-08-05

Abstract: Through a series of etching experiments, the effects of process parameters such as CF4 flow rate and RF power on etched silicon-based materials in the process of reactive ion etch(RIE)were studied. The corresponding etching parameters such as etch rate, uniformity and selection ratio, etc. were obtained by using different technological conditions. The results are compared and analyzed, and the relatively optimum technological conditions are obtained, which can realize the anisotropy etch of silicon. The application of silicon-based material etching technology in semiconductor technology has been explored experimentally in this paper.

Key words: RIE, anisotropy, silicon, uniformity, selection ratio

CLC Number: 

  • TN304
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