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VACUUM ›› 2025, Vol. 62 ›› Issue (5): 53-57.doi: 10.13385/j.cnki.vacuum.2025.05.08

• Thin Film • Previous Articles     Next Articles

Study on the Properties of Sputtered In2Se3 Buffer Layers

ZHAO Ying1,2, LIU Yuandong3, LIN Bing2, ZHANG Hailong2   

  1. 1. Sichuan Energy Investment Hydrogen Industry Investment Co., Ltd., Chengdu 610000, China;
    2. Southwest Petroleum University, Chengdu 610500, China;
    3. Beijing Academy of Science and Technology, Beijing 100089, China
  • Received:2024-12-12 Published:2025-09-29

Abstract: In order to explore a low-toxicity buffer layer material to replace the CdS buffer layer commonly used in Cu（In,Ga）Se2 （CIGS） solar cells, magnetron sputtering technology was used to prepare thin film materials based on In2Se3 targets. The effects of pure sputtering, oxygen-doped sputtering and post-annealing treatment on the stoichiometric ratio, band gap and transmittance characteristics of the films were systematically studied. The results show that the transmittance of In2Se3 films prepared by sputtering is very low. Although the transmittance of the films can be improved by sputtering doped with oxygen, the stoichiometric ratio of the films will be greatly affected. The effect of post-annealing treatment on the properties of the films is negligible. The performance of In2Se3 thin films prepared by magnetron sputtering technology is still difficult to meet the application requirements of buffer layer materials.

Key words: buffer layer, In2Se3, magnetron sputtering, band gap, transmittance

CLC Number:  TB34

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