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VACUUM ›› 2022, Vol. 59 ›› Issue (6): 51-55.doi: 10.13385/j.cnki.vacuum.2022.06.09

• Thin Film • Previous Articles     Next Articles

Research on Performance Controlling Method of Fluorocarbon Nanostructured Film for Dry Reactors

ZHAO Qi1,2, MAN Yu-yan3, LI Su-ya1,2, LI Song-yuan1,2, LI Lin1,2   

  1. 1. State Grid Tianjin Electric Power Research Institute, Tianjin 300384, China;
    2. Tianjin Key Laboratory of Internet of Things in Electricity, Tianjin 300384, China;
    3. State Grid Tianjin Electric Power Company, Tianjin 300010, China
  • Received:2022-04-15 Online:2022-11-25 Published:2022-12-05

Abstract: Fluorocarbon(FC) film exhibits characteristics of low dielectric constant and friction coefficient, high thermal stability and chemical inertness, strong ultraviolet absorption, etc. As a surface modification material, it is expected to improve environmental weatherability and insulation stability of dry reactors during operation. Research on FC film preparation by sputtering has the advantages of less contamination by impurity particles, large deposition area, low cost of reactants, and no environmental pollution. The plasma state during sputtering is a key factor affecting the quality of FC film. This paper discusses the synergistic effects of vacuum chamber temperature and substrate temperature on the chemical composition, microstructure, deposition rate and micromorphology of FC film. The results show that the temperature directly influence generation, transportation and deposition of sputtering components. The increment of temperature results in morphology evolution law of particle-cluster-three-dimensional network structure. Deposition rate, roughness, fluorine to carbon ratio and the proportion of sp3 hybrid carbon increase with the sputtering temperature. Therefore, FC film develops in the direction of PTFE-like film, which is expected to exhibit more excellent physio-chemical properties.

Key words: fluorocarbon film, magnetron sputtering, micro-nano structure, physio-chemical property

CLC Number: 

  • O484
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