磁控溅射氧化硅和氧化硅/氮化硅/氧化硅薄膜绝缘性能的研究*

doi:10.13385/j.cnki.vacuum.2024.06.03

真空 ›› 2024, Vol. 61 ›› Issue (6): 15-20.doi: 10.13385/j.cnki.vacuum.2024.06.03

磁控溅射氧化硅和氧化硅/氮化硅/氧化硅薄膜绝缘性能的研究^*

陈玉云¹, 王晓旭², 陈远明¹, 沈奕¹, 黄锐³

1.汕头超声显示器技术有限公司广东省车载显示触控技术重点实验室,广东汕头 515041;
2.汕头超声显示器（二厂）有限公司,广东汕头 515041;
3.韩山师范学院,广东潮州 521000

收稿日期:2024-01-23 出版日期:2024-11-25 发布日期:2024-11-29
通讯作者: 沈奕,教授级高级工程师,博士生导师。
作者简介:陈玉云（1992-）,女,广东省汕头人,博士。
基金资助:
* 2023年省科技创新战略专项市县科技创新支撑（大专项+任务清单）项目（STKJ2023053）

Study of Electrical Insulation Property of Magnetron Sputtered Silicon Oxide and Silicon Oxide/Silicon Nitride/Silicon Oxide Films

CHEN Yu-yun¹, WANG Xiao-xu², CHEN Yuan-ming¹, SHEN Yi¹, HUANG Rui³

1. Guangdong Provincial Key Laboratory of Automotive Display and Touch Technologies, Shantou Goworld Display Technology Co., Ltd., Shantou 515041, China;
2. Shantou Goworld Display (Plant II) Co., Ltd., Shantou 515041,China;
3. Hanshan Normal University, Chaozhou 521000, China

Received:2024-01-23 Online:2024-11-25 Published:2024-11-29

摘要/Abstract

摘要： 研究了磁控溅射氧化硅（SiO₂）单层和氧化硅/氮化硅（Si₃N₄）/氧化硅（ONO叠层）的绝缘性能,对多批次、尺寸为4.5 cm×3.5 cm的SiO₂单层和ONO叠层进行了绝缘电阻测试。结果表明：ONO叠层的全域绝缘样品比例高于SiO₂单层的全域绝缘样品比例,且不同批次ONO叠层的绝缘性能更加稳定;相比于SiO₂单层,ONO叠层的桥氧伸缩振动信号（A峰）位置蓝移,氧空位缺陷相关信号（B峰）和非桥氧伸缩振动信号（C峰）相对于桥氧弯曲振动信号（D峰）较弱,说明ONO叠层的原子缺陷（氧空位、非桥氧等）较少,其原因为添加Si₃N₄夹层能够在化学上阻断SiO₂缺陷扩展;通过定量化A峰位置、D峰与B峰强度之比、D峰与C峰强度之比三个参数,获得了无损评估SiO₂单层和ONO叠层绝缘性能的指标。

关键词: 磁控溅射, 氧化硅, ONO叠层, 绝缘性能, 傅里叶红外光谱, 无损探测

Abstract: Electrical insulation property of magnetron sputtered silicon oxide (SiO₂) and silicon oxide/silicon nitride (Si₃N₄)/silicon oxide (ONO) films were investigated. The insulation resistance of three batches of SiO₂ and ONO films of 4.5 cm × 3.5 cm were tested. The results show that the ratio of fully-insulative ONO films is relatively higher and more stable. Compared with SiO₂single layer, the signal related to stretch motions of bridge oxygen (peak A) of ONO film is blue shifted, and the signal related to oxygen vacancies (peak B) or bending motions of non-bridge oxygen (peak C) is weaker than the signal related to bending motion of bridge oxygen (peak D). These structural features indicate that the atomic defects (such as oxygen vacancies and non-bridge oxygen) within ONO films are less than those within SiO₂ films. Such differences are understood in terms that the addition of Si₃N₄ interlayer chemically interrupts the continuous growth of defects in SiO₂ films. By quantifying the three parameters including position of peak A, the ratio of intensity of peak D to that of peak B, the ratio of intensity of peak D to that of peak C, the electrical insulation properties of SiO₂ and ONO films can be evaluated non-destructively.

Key words: magnetron sputtering, silicon oxide, ONO stack, electrical insulation property, FTIR spectroscopy, non-destructive testing

中图分类号: O484.1

陈玉云, 王晓旭, 陈远明, 沈奕, 黄锐. 磁控溅射氧化硅和氧化硅/氮化硅/氧化硅薄膜绝缘性能的研究^*[J]. 真空, 2024, 61(6): 15-20.

CHEN Yu-yun, WANG Xiao-xu, CHEN Yuan-ming, SHEN Yi, HUANG Rui. Study of Electrical Insulation Property of Magnetron Sputtered Silicon Oxide and Silicon Oxide/Silicon Nitride/Silicon Oxide Films[J]. VACUUM, 2024, 61(6): 15-20.

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磁控溅射氧化硅和氧化硅/氮化硅/氧化硅薄膜绝缘性能的研究^*

Study of Electrical Insulation Property of Magnetron Sputtered Silicon Oxide and Silicon Oxide/Silicon Nitride/Silicon Oxide Films

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