真空 ›› 2023, Vol. 60 ›› Issue (4): 24-28.doi: 10.13385/j.cnki.vacuum.2023.04.05
黄传鑫1, 辛纪英2, 田中俊1, 王猛1, 吕凯凯1, 梁兰菊1, 刘云云1
HUANG Chuan-xin1, XIN Ji-ying2, TIAN Zhong-jun1, WANG Meng1, LÜ Kai-kai1, LIANG Lan-ju1, LIU Yun-yun1
摘要: 氧化物薄膜晶体管(TFT)是有源矩阵有机发光二极管的核心驱动元件,是现今开发新型显示器的关键技术,在平板显示方面具有广阔的应用前景。但氧化物半导体中存在大量由氧空位引起的缺陷态,从而影响了TFT器件的性能及稳定性,成为其商业化进程的瓶颈。本文通过磁控溅射方法制备了IZO TFT,并将其进行O2等离子体处理,研究了离子体处理对IZO薄膜及TFT性能的影响。结果表明:O2等离子体处理后IZO TFT迁移率由8.2cm2/(V·s)提高到9.5cm2/(V·s),阈值电压由-3.2V减小到-5.1V,亚阈值摆幅由0.45V/decade减小到0.38V/decade,开关比由2.3×107提高到4.4×107;在光照负偏压下,器件的阈值电压漂移量从7.1V降低到3.2V;在100℃老化条件下,器件的阈值电压漂移量从12.5V降低到6.4V;O2等离子体处理可以有效提高IZO TFT的电学性能和稳定性。
中图分类号: O539;TN386
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