新型MPCVD谐振腔装置仿真设计研究

doi:10.13385/j.cnki.vacuum.2025.06.02

摘要/Abstract

摘要： 利用数值模拟技术,结合COMSOL Multiphysics软件,提出了一种新型MPCVD装置,利用微波电场对装置结构参数进行了仿真优化,并在最优尺寸下模拟计算了装置的流场分布,以及腔体的等离子体和电场分布,最后开展了金刚石薄膜的制备试验,研究了甲烷、氧气含量对金刚石薄膜生长的影响。结果表明：最佳尺寸下基片台上方的电场强度最高,可达6 430 V/m,输入功率为4.5 kW、压强为80 torr时可得到完全覆盖基片台的稳定半球形等离子体;装置最佳进气口位于正上方,两排气口位置对称分布在下方;随CH₄含量增加,金刚石的沉积速率加快,但CH₄含量过高会造成晶体质量变差,CH₄与H₂体积比为6%时,晶体质量较好;随着O₂的增加,金刚石的沉积速率先增大后减小,当O₂与H₂体积比为2%时沉积速率接近0,O₂与H₂体积比为0.5%时,晶体质量较好。由拉曼测试结果可知,适宜浓度的O₂可以提高金刚石的晶体质量,促进沉积速率。

关键词: MPCVD, 金刚石薄膜, 数值模拟, 等离子体, 微波谐振腔

Abstract: Utilizing numerical simulation techniques in combination with COMSOL Multiphysics software, a novel MPCVD system was proposed. The structural parameters of the system was optimized through simulation under a microwave electric field. At the optimal dimensions, the flow field distribution, the plasma and electric field distribution of the device were simulated and calculated. Finally, diamond films were deposited, and the effects of methane and oxygen content on the growth of diamond films were studied. The results show that under the optimal dimensions, the highest electric field intensity is above the substrate holder, reaching 6 430 V/m, and a stable hemispherical plasma completely covering the substrate holder without secondary plasma formation is obtained at an input power of 4.5 kW and a pressure of 80 torr. The optimal air inlet of the device is located directly above, and two exhaust outlets are symmetrically distributed below. The higher CH₄ content leads to a faster deposition rate, but the excessive CH₄ content degrades the crystal quality. When the volume ratio of CH₄ to H₂ is 6%, the crystal quality is better. As the O₂ content increases, the diamond deposition rate increases first and then decreases. When the volume ratio of O₂ to H₂ reaches 2%, the deposition rate approaches 0. When the volume ratio of O₂ to H₂ is 0.5%, the crystal quality is better.

Key words: MPCVD, diamond film, numerical simulation, plasma, microwave resonant cavity

中图分类号: TN33

范兰兰, 邱俊杰. 新型MPCVD谐振腔装置仿真设计研究[J]. 真空, 2025, 62(6): 9-15.

FAN Lanlan, QIU Junjie. Simulation Design Study of New MPCVD Resonant Cavity Device[J]. VACUUM, 2025, 62(6): 9-15.

参考文献

[1] ASHKINAZI E E, KHMELNITSKII R A, SEDOV V S, et al.Morphology of diamond layers grown on different facets of single crystal diamond substrates by a microwave plasma CVD in CH₄-H₂-N₂ gas mixtures[J]. Crystals, 2017, 7(6): 166.
[2] AKASHI N, FUJIMAKI N, SHIKATA S.Influence of threading dislocations on diamond Schottky barrier diode characteristics[J]. Diamond and Related Materials, 2020, 109: 108024.
[3] AIELLO G, AVRAMIDIS K A, GANTENBEIN G, et al.Design verification of the gyrotron diamond output window for the upgrade of the ECRH system at W7-X[J]. Fusion Engineering and Design, 2021, 165: 112262.
[4] KOPOSOVA E V, MYASNIKOVA S E, PARSHIN V V, et al.The absorption investigation in CVD-diamond plates and windows at 50-200 GHz[J]. Diamond and Related Materials, 2002, 11(8): 1485-1490.
[5] SONG C W, JIN R, HWANG N M, et al.Deposition behavior of boron-doped diamond with varying amount of acetone by hot filament chemical vapor deposition[J]. Electronic Materials Letters, 2019, 15: 630-638.
[6] ZHENG Y, LIU J, WANG J, et al.The direct-current characteristics and surface repairing of a hydrogen-terminated free-standing polycrystalline diamond in aqueous solutions[J]. Journal of Physics and Chemistry of Solids, 2019, 130: 111-119.
[7] 张一卓. 新型MPCVD金刚石膜沉积装置模拟及实验研究[D]. 太原:太原理工大学, 2022.
[8] VIKHAREV A L, GORBACHEV A M, LOBAEV M A, et al.Novel microwave plasma-assisted CVD reactor for diamond delta doping[J]. Physica Status Solidi (RRL)-Rapid Research Letters, 2016, 10(4): 324-327.
[9] YAMADA H.Numerical simulations to study growth of single-crystal diamond by using microwave plasma chemical vapor deposition with reactive (H, C, N) species[J]. Japanese Journal of Applied Physics, 2012, 51(9R): 090105.
[10] 李义锋. 新型高功率MPCVD装置研制与金刚石膜高效沉积[D]. 北京:北京科技大学, 2015.
[11] 王凤英, 郭会斌, 唐伟忠, 等. 圆柱形和椭球形谐振腔式 MPCVD 装置中微波等离子体分布特征的数值模拟与比较[J]. 人工晶体学报, 2008, 37(4): 895-900.
[12] 于盛旺, 范朋伟, 李义锋, 等. 椭球谐振腔式 MPCVD 装置高功率下大面积金刚石膜的沉积[J]. 人工晶体学报, 2011, 40(5): 1145-1149.
[13] LI Y F, AN X M, LIU X C, et al.A 915 MHz/75 kW cylindrical cavity type microwave plasma chemical vapor deposition reactor with a ladder-shaped circumferential antenna developed for growing large area diamond films[J]. Diamond and Related Materials, 2017, 78: 67-72.
[14] 李义锋, 唐伟忠, 姜龙, 等. 915 MHz 高功率 MPCVD 装置制备大面积高品质金刚石膜[J]. 人工晶体学报, 2019, 48(07): 1262-1267.
[15] 唐伟忠, 于盛旺, 范朋伟, 等. 高品质金刚石膜微波等离子体 CVD 技术的发展现状[J]. 中国材料进展, 2012, 31(8): 33-39.
[16] SILVA F, HASSOUNI K, BONNIN X, et al.Microwave engineering of plasma-assisted CVD reactors for diamond deposition[J]. Journal of Physics: Condensed Matter, 2009, 21(36): 364202.
[17] 谷昊周. 微波等离子体化学气相沉积谐振腔的数值仿真与研究[D]. 杭州:杭州电子科技大学, 2022.
[18] HIRAKI A, KAWARADA H, WEI J, et al.Preparation and characterization of wide area, high quality diamond film using magnetoactive plasma chemical vapour deposition[J]. Surface and Coatings Technology, 1990, 43: 10-21.
[19] 胡海天,邬钦崇,盛奕建. 微波等离子体化学气相沉积金刚石膜[J].物理,1996(11):688-691.
[20] 蔡让岐,陈光华,宋雪梅,等.纳米金刚石涂层上化学气相沉积金刚石薄膜的场电子发射[J].科学通报, 2003, 48(12): 1282-1285.
[21] 张帅,安康,杨志亮,等. 新型MPCVD沉积模式制备高均匀性的D100 mm金刚石薄膜[J]. 真空与低温, 2022, 28(5): 549-555.
[22] 张青. 75 kW、915 MHz MPCVD装置生长单晶金刚石的研究[D]. 武汉:武汉工程大学, 2022.
[23] BOLSHAKOV A P, YUROV V Y, FEDOROVA I A, et al.Growth of homoepitaxial single crystal diamond by microwave plasma CVD in H₂-CH₄-O₂ gas mixtures at high microwave power densities[J]. Diamond and Related Materials, 2024, 150: 111721.
[24] YANG Z, AN K, FENG X, et al.Explore the growth mechanism of high-quality diamond under high average power density in the MPCVD reactor[J]. Materials Science and Engineering: B, 2024, 302: 117248.
[25] 李廷垟,翁俊,张青. 氧气浓度对单晶金刚石生长的影响[J]. 化学工程与装备,2022(11):6-7.
[26] EMELYANOV A A, PINAEV V A, PLOTNIKOV M Y, et al.Effect of methane flow rate on gas-jet MPCVD diamond synthesis[J]. Journal of Physics D: Applied Physics, 2022, 55(20): 205202.
[27] BOLSHAKOV A P, RALCHENKO V G, SHU G, et al.Single crystal diamond growth by MPCVD at subatmospheric pressures[J]. Materials Today Communications, 2020, 25: 101635.

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