磁控溅射In2Se3薄膜缓冲层性能研究*

doi:10.13385/j.cnki.vacuum.2025.05.08

摘要/Abstract

摘要： 为了探索一种低毒性的缓冲层材料来替代Cu（In, Ga）Se₂（CIGS）薄膜电池中常用的CdS缓冲层,采用磁控溅射技术,以In₂Se₃为靶材制备薄膜材料,系统研究了单纯溅射﹑掺氧溅射以及后退火处理对薄膜的化学计量比﹑带隙和透过率的影响。结果表明,单纯溅射制备的In₂Se₃薄膜透过率很低;而掺杂氧气进行溅射,虽然可以改善薄膜的透过率,但是会对薄膜化学计量比产生较大影响;后退火处理对薄膜性能的影响微乎其微。采用磁控溅射技术制备的In₂Se₃薄膜,其性能尚难以满足缓冲层材料的应用需求。

关键词: 缓冲层, In₂Se₃, 磁控溅射, 带隙, 透过率

Abstract: In order to explore a low-toxicity buffer layer material to replace the CdS buffer layer commonly used in Cu（In,Ga）Se₂ （CIGS） solar cells, magnetron sputtering technology was used to prepare thin film materials based on In₂Se₃ targets. The effects of pure sputtering, oxygen-doped sputtering and post-annealing treatment on the stoichiometric ratio, band gap and transmittance characteristics of the films were systematically studied. The results show that the transmittance of In₂Se₃ films prepared by sputtering is very low. Although the transmittance of the films can be improved by sputtering doped with oxygen, the stoichiometric ratio of the films will be greatly affected. The effect of post-annealing treatment on the properties of the films is negligible. The performance of In₂Se₃ thin films prepared by magnetron sputtering technology is still difficult to meet the application requirements of buffer layer materials.

Key words: buffer layer, In₂Se₃, magnetron sputtering, band gap, transmittance

中图分类号: TB34

赵颖, 刘沅东, 林冰, 张海龙. 磁控溅射In₂Se₃薄膜缓冲层性能研究^*[J]. 真空, 2025, 62(5): 53-57.

ZHAO Ying, LIU Yuandong, LIN Bing, ZHANG Hailong. Study on the Properties of Sputtered In₂Se₃ Buffer Layers[J]. VACUUM, 2025, 62(5): 53-57.

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磁控溅射In₂Se₃薄膜缓冲层性能研究^*

Study on the Properties of Sputtered In₂Se₃ Buffer Layers

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